國立中興大學教學大綱
課程名稱 (中) 半導體物理導論(一)(4105)
(Eng.) Introduction to Semiconductor Physics(I)
開課單位 物理系
課程類別 選修 學分 3 授課教師 王雷
選課單位 物理系 / 學士班 授課使用語言 英文 英文/EMI Y 開課學期 1142
課程簡述 This course provides a fundamental introduction to semiconductor physics, covering the essential principles governing the electronic, optical, and transport properties of semiconductor materials. Topics include crystal structures, energy band theory, carrier statistics, carrier transport mechanisms, generation and recombination processes, and basic semiconductor junctions and devices. The course establishes a solid theoretical foundation for advanced studies in microelectronics, optoelectronics, nanotechnology, and semiconductor device engineering.
先修課程名稱
課程與核心能力關聯配比(%) 課程目標之教學方法與評量方法
課程目標 核心能力 配比(%) 教學方法 評量方法
 Understand the fundamental physical principles of semiconductors.
 Analyze carrier statistics and transport phenomena.
 Explain the operation of semiconductor junctions and basic devices.
 Relate material properties to electrical and optical behavior.
 Prepare students for advanced semiconductor and nanoelectronics courses.
專題探討/製作
習作
討論
實習
其他
講授
書面報告
出席狀況
口頭報告
作業
作品
授課內容(單元名稱與內容、習作/每週授課、考試進度-共16週加自主學習)
週次 授課內容
第1週 Introduction to Semiconductors: classification of solids, applications, overview of semiconductor materials.
第2週 Crystal Structure and Bonding: crystal lattices, unit cells, diamond and zinc blende structures, lattice defects.
第3週 Energy Bands in Solids: free electron model, band formation, bandgap concept.
第4週 Band Structure of Semiconductors: direct and indirect bandgaps, effective mass, density of states.
第5週 Charge Carriers: electrons and holes, intrinsic semiconductors, thermal generation.
第6週 Carrier Statistics: Fermi–Dirac distribution, Fermi level, Maxwell–Boltzmann approximation.
第7週 Extrinsic Semiconductors: doping, donor and acceptor levels, temperature dependence.
第8週 Carrier Transport I: drift, mobility, conductivity, scattering mechanisms.
第9週 Carrier Transport II: diffusion, Einstein relation, continuity equation.
第10週 Generation and Recombination: radiative and nonradiative recombination, carrier lifetime.
第11週 p-n Junction Fundamentals: depletion region, built-in potential, energy band diagrams.
第12週 p-n Junction Characteristics: I–V characteristics, ideal diode equation, breakdown mechanisms.
第13週 Metal–Semiconductor Junctions: Schottky and ohmic contacts, barrier height.
第14週 Basic Semiconductor Devices: diodes, LEDs, photodiodes, introduction to BJTs.
第15週 Introduction to MOS Devices: MOS capacitor, threshold voltage, MOSFET basics.
第16週 Course Review and Final Examination / Comprehensive Discussion.
自主學習
內容
   02.閱覽產業及學術相關多媒體資料
   03.製作專題報告

學習評量方式
Attendance, Homework Assignments, Midterm Examination, Final Examination
教科書&參考書目(書名、作者、書局、代理商、說明)
 B. G. Streetman and S. Banerjee, Solid State Electronic Devices, Pearson.
 S. M. Sze and K. K. Ng, Physics of Semiconductor Devices, Wiley.
 C. Kittel, Introduction to Solid State Physics, Wiley.
課程教材(教師個人網址請列在本校內之網址)

課程輔導時間
09:00-12:00
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